2SK datasheet, 2SK circuit, 2SK data sheet: TOSHIBA – N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS), alldatasheet. 2SK, datasheet for 2SK – N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) provided by Toshiba Semiconductor. 2SK pdf . Toshiba 2SK 17 available from 2 distributors. Explore Discrete Semiconductors on Octopart: the fastest source for datasheets, pricing, specs and .

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Two Words posted by djk on January 09, at It shares with the IGBT an isolated gate that makes it easy to drive. Does anyone has such experience with SJ and SK I have my eyes without leaving the current meeting, the current then flutuated from 75 to as high as mA.

Two pairs were used per channel. I was suggested that some of these devices are pretty unstable in the first hours. Have you put a voltmeter acros the bias network or from gate of J to gate of K and tracked that voltage with time?

2SK (TOSHIBA) PDF技术资料下载 2SK 供应信息 IC Datasheet 数据表 (1/4 页)

Put an small plastic capacitor parallell over feedback resistor goes from output to inputstage pF or pF See if it gets better if so you have found that amp was unstable. Sorry for my “english” Datashee description The Field-Effect Transistor FET is a transistor that uses an electric field dataaheet control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. The gate resistor is ohm 2sk11529.


Also the quality of these BUZ? Most other devices for example HexFETs don’t have a zero tempco until the drain current reaches the several amps region – so you’d need a bias control circuit! I leave it on for a while feeling OK. And also if current differ from high to low to high. Any comment on the SJ Santos on January 06, at There is a Zobel already. Do you have any 0. Compared to the other power semiconductor devices, for example IGBT, Thyristor, its main advantages are high commutation speed and good efficiency at low voltages.

Also good for outputs for amps in datadheet 25W size. Check the devices data sheets. How big are your gate resistors?

I set the bias current to 65 milliamp per 2k1529. That has led me to believe that the Mosfet itself could be the cause. Hi Alan You’re right – those voltages should be be no problem. Posted by akltam on January 05, at Drain – Source Voltage Vdss.

And they will be usable if not better alternative!

The more common, cheaper, drain to the case are of a vertical construction. I think you know about those. A resistor to Gate.

Burning is typical unstable Circuit. Thanks for the advice – J. Then choose a final capacitor 1. Audio Asylum Thread Printer Get a view of an entire thread on one page. FETs are unipolar transistors as they involve single-carrier-type operation.


And the Sj have it at mA. NT – akltam Jorge Santos Thermal Runaway – djk Alan I don’t think the problem is with the transistors. Thanks for the advice posted by J. Try up to R.

The MOSFET is by far the most dataeheet transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. What about the quality of these BUZ?

K1529 Datasheet PDF – Toshiba Semiconductor

And would try the parallel cap as suggested. Have you put a scope on the output to look oscillation or a high DC offset? Because these two terminals are normally connected to each other short-circuited internally, only three terminals appear in electrical diagrams.

IRF datasheet groman Two Words – djk I am not sure, but I think they use the same die design for some of their devices as the orginal Hitachi parts. Really lots of thanks here. Groman had a real good point about the bias voltage.

Thanks for you reply. Many thanks for all of you who has helped. Is this the case? So you need a temperature compensation for the Sj,usualy a transistor multiplifier BE mouted in thermal contact with the output devices.